NSS30070MR6T1G ON Semiconductor

Артикул

NSS30070MR6T1G

Производитель

ON Semiconductor

Описание

NSS30070MR6T1G - 30V 700mA LOW VCE(sat) PNP Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Applications Load Switching, Batte