NGB8206N ON Semiconductor

Артикул

NGB8206N

Производитель

ON Semiconductor

Описание

NGB8206N - Ignition IGBT 20 A, 350 V, N-channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) Featuresmonolithic Circuitry Integrating Esd and Over?Voltage Clampedprotection For Use in Inductive Coil Drivers Applications. Primary Usesinclude Ignition, Direct Fuel Injection, or Wherever High Voltage Andhigh Current Switching is Required.